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AU Basic Electronic Devices and Applications Sem V - Elective
Unit 3 : Field Effect Transistors(Classification of field effect transistors, Junction field effect transistors (JFET), The salient features of JFET, Comparative characteristics of JFET and BJT, Merits of JFET, JFET characteristics, Drain characteristics, Comparison of CS, CD and CG JFET amplifier, Applications of JFETs, Metal oxide semiconductor field effect transistor (MOSFET), Enhancement type MOSFET, Depletion type MOSFET, Salient features of enhancement and depletion type of MOSFET, Comparison between JFET and MOSFET)
1. Field Effect Transistors (FET)(Electronics) Total View (5)
 
The Field Effect Transistor (FET), like the bipolar junction transistor is a three terminal semiconductor device. However the major functional difference between BJT and FET is that, the current through FET is controlled by a voltage rather than by a current as in BJT. That is FETs are voltage-operated devices.
Title: Electron Devices
Published on: 27/05/15
Author: Ramesh Babu P
Publisher: Scitech Publications India Pvt Ltd
Pages: 29
Price: Rs 10.15

2. Field Effect Transistors(Analog Electronic Circuits ) Total View (30)
 
Introduction, Construction & characteristics of JFETS, Transfer Characteristics, Depletion type MOSFET, Enhancement type MOSFET.
Title: Analog Electronics
Published on: 05/10/16
Author: S. Sowndeswari
Publisher: Sambhram Institute of Technology
Pages: 29
Price: Rs 10.15

3. Field Effect Transistors(Solid State Devices and Technology) Total View (489)
 
Field effect transistors (FET) are devices which work on the principle of "field effect". Field effect refers to the process of modulation of longitudinal current flow between two terminals of the device by a transverse electric field applied to the third terminal. There are different techniques by which field effect is realized. Based on this FETs may be of different types - junction field effect ......
Title: Solid State Devices and Technology
Published on: 28/10/14
Author: Suresh Babu V
Publisher: Sanguine Technical Publishers
Pages: 84
Price: Rs 63

4. Field-effect transistor(Analog Electronic Circuits ) Total View (0)
 
The FET or Field Effect Transistor is a three terminal device that uses an electric field to control the current flowing through the device - it also has a high input impedance which is useful in many circuits.
Title: Analog Electronics
Published on: 26/09/18
Author:
Publisher:
Pages: 10
Price: Rs 5

5. Field-Effect (Electronics) Total View (3)
 
Field-Effect
Title: Final Analog Electronics
Published on: 16/04/18
Author: SATISH R T
Publisher: Subhas Stores
Pages: 66
Price: Rs 42.9

6. Semiconductor Devices(Electronic Devices and Circuits) Total View (2)
 
In the last 25 years a number of solid state devices have come into use. Most of these devices use semiconductor crystals. Field of electronics has been revolutionized since the discovery of transistor in 1948. The vacuum tubes have been largely replaced by solid state devices. Technological development, such as invention of integrated circuits, has further increased the dependence on semiconducti ......
Title: Electronics Devices and Circuits
Published on: 27/05/15
Author: Palanisamy P K
Publisher: Scitech Publications India Pvt Ltd
Pages: 49
Price: Rs 17.15

7. Introduction to IC Technology(VLSI Design ) Total View (659)
 
Integrated circuit era, VLSI Design Flow, Why CMOS?, Comparison between MOSFET and BJT, Gorden Moore's Law, Basic MOS Transistors, Enhancement mode transistor, nMOS depletion mode transistor, p-MOS Enhancement mode transistor, Enhancement mode transistor action, Depletion mode transistor action, Introduction, Fabrication Process Flow - Basic Steps, nMOS Fabrication, CMOS Fabrication, The p-well pr ......
Title: Introduction to VLSI Design
Published on: 28/10/14
Author: Kiran Kumar V G
Publisher: Sanguine Technical Publishers
Pages: 28
Price: Rs 0

8. BJT AC Analysis(Electronics) Total View (7)
 
A model is a combination of circuit elements, property chosen, that best approximates the actual behaviour of a semiconductor device under specific operating conditions
Title: Final Analog Electronics
Published on: 16/04/18
Author: SATISH R T
Publisher: Subhas Stores
Pages: 86
Price: Rs 0

9. FINFET TECHNOLOGY(Electronics and Communication) Total View (2)
 
With increasing demand for the portable devices like mobiles, ipads etc. there is a demand for low power devices which require small area and high speed device operation. Low power has become the topic of research for the VLSI engineers.
Title: DESIGNING WITH FINFETS
Published on: 05/03/19
Author:
Publisher:
Pages: 29
Price: Rs 14.5

10. Model Question Papers(Electronics) Total View (6)
 
Model Question Papers
Title: Electron Devices
Published on: 27/05/15
Author: Ramesh Babu P
Publisher: Scitech Publications India Pvt Ltd
Pages: 8
Price: Rs 2.8

11. Electronics Circuits(Electronic Circuits ) Total View (1006)
 
Solved Question Papers
Title: Harbinger 2014-3rd SEM Computer Science-Information Science
Published on: 11/12/14
Author: Harbinger Series
Publisher: Sanguine Technical Publishers
Pages: 158
Price: Rs 118.5

12. Contents(Electronics and Communication) Total View (2)
 
This book comprises of 8 chapters viz., BJT Biasing - FET & MOSFET Biasing - BJT Amplifier - Multistage Amplifier using BJT - FET & MOSFET Amplifier - Frequency Response of BJT - Frequency Response of FET & MOSFET - Power supply. Annexure (appendix)
Title: Electronic Circuits I - 3rd Edition
Published on: 27/02/19
Author:
Publisher:
Pages: 16
Price: Rs 0

13. Chapter 5 * FET & MOSFET Ampli fier(Electronics and Communication) Total View (0)
 
This chapter deals with - Generalized small signal model for FET - Small signal model of common source configuration of JFET with fixed bias & self bias circuits - Small signal model of common source configuration of JFET without bypass capacitor - Small signal model of common source configuration of JFET with voltage divider bias circuit - Small signal model of common drain configuration of JFET ......
Title: Electronic Circuits I - 3rd Edition
Published on: 27/02/19
Author:
Publisher:
Pages: 42
Price: Rs 21

14. Introduction(Electronics and Communication) Total View (1)
 
The first integrated circuit was flip-flop with two transistors built by Jack Kilby at Texas Instruments in the year 1958.
Title: VLSI Design
Published on: 09/10/18
Author:
Publisher:
Pages: 30
Price: Rs 0

15. Integrated Circuit Fabrication(Electronics) Total View (4)
 
The first integrated circuits (ICs) were manufactured independently by two scientists: Jack Kilby of Texas Instruments and Robert Noyce of Fairchild semiconductors. Integrated circuits were made possible by continued experimental discoveries which showed that semiconductor devices could perform the functions of vacuum tubes.
Title: Electron Devices
Published on: 27/05/15
Author: Ramesh Babu P
Publisher: Scitech Publications India Pvt Ltd
Pages: 50
Price: Rs 17.5

16. MOS Transistor Theory(VLSI Design ) Total View (656)
 
Introduction, nMOS transistor, Principle of operation of nMOS transistor, Influence of drain to source bias VDS, 3.2.3 Factors affecting the drain current, Derivation of drain current, The non saturated region, The saturated region, Channel length modulation, Threshold voltage (Vt ), MOS transistor transconductance gm and output conductance gds
Title: Introduction to VLSI Design
Published on: 07/06/14
Author: Kiran Kumar V G
Publisher: Sanguine Technical Publishers
Pages: 13
Price: Rs 9.75

17. Bipolar Junction Transistors(Electronics) Total View (358)
 
In this chapter we will study about a three layer device known as Bipolar Junction Transistor (BJT). As the name implies the current through the transistor is due to both majority and minority carriers. The BJTs are of two types.
Title: Electron Devices
Published on: 27/05/15
Author: Ramesh Babu P
Publisher: Scitech Publications India Pvt Ltd
Pages: 33
Price: Rs 11.55

18. Chapter 2 * FET & MOSFET Biasing(Electronics and Communication) Total View (0)
 
This chapter deals with - Plotting of transfer characteristics - Fixed bias circuit - Self bias circuit - Voltage-divider bias circuit - Biasing of MOSFET
Title: Electronic Circuits I - 3rd Edition
Published on: 27/02/19
Author:
Publisher:
Pages: 56
Price: Rs 28

19. Chapter 7 * Frequency Response of FET & MOSFET(Electronics and Communication) Total View (0)
 
This chapter deals with - Analysis of low, mid and high frequency response of FET Amplifier - Frequency response of common-source FET Amplifier - Low frequency response - High frequency response - Frequency response of common-drain FET Amplifier - Low frequency response - High frequency response - Frequency response of common-gate FET Amplifier - Low frequency response - High frequency response - ......
Title: Electronic Circuits I - 3rd Edition
Published on: 27/02/19
Author:
Publisher:
Pages: 22
Price: Rs 11

20. Mechatronics and Microprocessor(Mechanical) Total View (2016)
 
Solved Question Papers
Title: Harbinger - 6th Sem, VTU, 2013, Mechanical
Published on: 26/02/14
Author: Harbinger Series
Publisher: Sanguine Technical Publishers
Pages: 79
Price: Rs 59.25

21. Transistor(Physics) Total View (147)
 
Transistor action, characteristics (CE-mode), Biasing, Load line analysis, Transistor as an amplifier (CE-mode), h- parameters.
Title: Concise Physics BSc V Semester Volume 6 (503)
Published on: 26/09/14
Author: Sarmistha Sahu
Publisher: Subhas Stores
Pages: 44
Price: Rs 33

22. FINFET SRAM CELL DESIGN(Electronics and Communication) Total View (1)
 
SRAM doesn’t have a capacitor to store the data, and hence SRAM works without refreshing. In SRAM the data is lost when the memory is not electrically powered. SRAM is faster and more reliable than the more common DRAM.
Title: DESIGNING WITH FINFETS
Published on: 05/03/19
Author:
Publisher:
Pages: 42
Price: Rs 21

23. Bipolar Junction Transistor(Basic Electronics ) Total View (3)
 
The first Junction transistor was invented in 1947 at the Bell Telephone Laboratories by Dr. William Schockley and his co-inventors Dr. John Bardeen and Dr. Brattain. Transistor is capable of amplifying electronic signals such as radio and TV signals. This chapter discusses the construction of Bipolar Junction Transistor (BJT), its working and its characteristics. The amplification property of BJT ......
Title: Basic Electronics
Published on: 10/02/15
Author: Mahadevaswamy U B
Publisher: Sanguine Technical Publishers
Pages: 45
Price: Rs 33.75

24. Fundamentals of CMOS VLSI(Fundamentals of CMOS VLSI ) Total View (1153)
 
Solved Question Papers
Title: Harbinger - 5th Sem, VTU, 2014, Electronics and Communication
Published on: 25/08/14
Author: Harbinger Series
Publisher: Sanguine Technical Publishers
Pages: 96
Price: Rs 72

25. Integrated Circuits(Physics) Total View (191)
 
Monolithic IC - description of discrete IC - Techniques of manufacturing, thin film and thick film IC
Title: Concise Physics BSc VI Semester Volume 8 (603)
Published on: 08/09/14
Author: Sarmistha Sahu
Publisher: Subhas Stores
Pages: 9
Price: Rs 6.75



 
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